SiC MOSFET junction temperature measurement method and system based on fractional order modeling

The invention provides a SiC MOSFET junction temperature measurement method and system based on fractional order modeling, and solves the technical problem of low temperature sensitivity of a junction temperature measurement method in the prior art compared with a traditional SiC MOSFET junction temperature measurement method. According to the method, a fractional order model is adopted, the method has the advantages of flexibility and accuracy, the temperature sensitivity of electrical parameters of the SiC MOSFET can be effectively improved, and therefore more accurate and rapid junction temperature measurement is achieved; according to the method, the safety and the stability of the power electronic equipment are improved, faults caused by overheating of the device are reduced, the reliability of the device is improved, and the maintenance cost is reduced; besides, a brand-new analysis tool is provided for other related fields, the application range is widened, and the method has important practical value.