Preparation method of silicon adapter plate and silicon adapter plate
The embodiment of the invention provides a preparation method of a silicon adapter plate and the silicon adapter plate, and the method comprises the steps: carrying out the etching of a silicon wafer, so as to form a silicon through hole in the silicon wafer, and enabling the thickness of the silico...
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| creator | LIU YANCHUN LI LIWEI XIAO WENHE LU YUAN ZHAO LIFANG YANG YUNCHUN LAN CHUANQI WANG PENGHUI ZHANG QUNCHAO QIU JIN ZHAO HANYANG GU PEIXIA |
| description | The embodiment of the invention provides a preparation method of a silicon adapter plate and the silicon adapter plate, and the method comprises the steps: carrying out the etching of a silicon wafer, so as to form a silicon through hole in the silicon wafer, and enabling the thickness of the silicon wafer to be greater than 600 [mu] m; carrying out pretreatment on the silicon through hole so as to remove impurities in the silicon through hole; after the silicon through hole is pretreated, a circulation process is executed until seed layers with a first preset thickness are deposited on the upper surface of the silicon wafer and the side wall of the silicon through hole, and the circulation process comprises the following steps that the seed layers are deposited on the upper surface of the silicon wafer and the side wall of the silicon through hole by adopting a magnetron sputtering method; and carrying out reverse etching on the seed layer deposited in the silicon wafer by adopting a reverse sputtering etchi |
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carrying out pretreatment on the silicon through hole so as to remove impurities in the silicon through hole; after the silicon through hole is pretreated, a circulation process is executed until seed layers with a first preset thickness are deposited on the upper surface of the silicon wafer and the side wall of the silicon through hole, and the circulation process comprises the following steps that the seed layers are deposited on the upper surface of the silicon wafer and the side wall of the silicon through hole by adopting a magnetron sputtering method; and carrying out reverse etching on the seed layer deposited in the silicon wafer by adopting a reverse sputtering etchi</description><subject>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHANKEotSCxKLMnMz1PITS3JyE9RyE9TKM7MyUwGiiSmJBaUpBYpFOQklqQqJOalYJfhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhubmpmYGpgaOxsSoAQD1iTMq</recordid><startdate>20240326</startdate><enddate>20240326</enddate><creator>LIU YANCHUN</creator><creator>LI LIWEI</creator><creator>XIAO WENHE</creator><creator>LU YUAN</creator><creator>ZHAO LIFANG</creator><creator>YANG YUNCHUN</creator><creator>LAN CHUANQI</creator><creator>WANG PENGHUI</creator><creator>ZHANG QUNCHAO</creator><creator>QIU JIN</creator><creator>ZHAO HANYANG</creator><creator>GU PEIXIA</creator><scope>EVB</scope></search><sort><creationdate>20240326</creationdate><title>Preparation method of silicon adapter plate and silicon adapter plate</title><author>LIU YANCHUN ; 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carrying out pretreatment on the silicon through hole so as to remove impurities in the silicon through hole; after the silicon through hole is pretreated, a circulation process is executed until seed layers with a first preset thickness are deposited on the upper surface of the silicon wafer and the side wall of the silicon through hole, and the circulation process comprises the following steps that the seed layers are deposited on the upper surface of the silicon wafer and the side wall of the silicon through hole by adopting a magnetron sputtering method; and carrying out reverse etching on the seed layer deposited in the silicon wafer by adopting a reverse sputtering etchi</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS TRANSPORTING |
| title | Preparation method of silicon adapter plate and silicon adapter plate |
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