Preparation method of silicon adapter plate and silicon adapter plate

The embodiment of the invention provides a preparation method of a silicon adapter plate and the silicon adapter plate, and the method comprises the steps: carrying out the etching of a silicon wafer, so as to form a silicon through hole in the silicon wafer, and enabling the thickness of the silico...

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Bibliographische Detailangaben
Hauptverfasser: LIU YANCHUN, LI LIWEI, XIAO WENHE, LU YUAN, ZHAO LIFANG, YANG YUNCHUN, LAN CHUANQI, WANG PENGHUI, ZHANG QUNCHAO, QIU JIN, ZHAO HANYANG, GU PEIXIA
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The embodiment of the invention provides a preparation method of a silicon adapter plate and the silicon adapter plate, and the method comprises the steps: carrying out the etching of a silicon wafer, so as to form a silicon through hole in the silicon wafer, and enabling the thickness of the silicon wafer to be greater than 600 [mu] m; carrying out pretreatment on the silicon through hole so as to remove impurities in the silicon through hole; after the silicon through hole is pretreated, a circulation process is executed until seed layers with a first preset thickness are deposited on the upper surface of the silicon wafer and the side wall of the silicon through hole, and the circulation process comprises the following steps that the seed layers are deposited on the upper surface of the silicon wafer and the side wall of the silicon through hole by adopting a magnetron sputtering method; and carrying out reverse etching on the seed layer deposited in the silicon wafer by adopting a reverse sputtering etchi