Optoelectronic devices, related memories, multiplexers, implants and methods for generating single photons

The invention relates to a device (10) comprising a first segment (15), a second segment (20), a first contact (25) and a second contact (30), the first segment (15) being made of a semiconductor having a first doping, the second segment (20) being made of a semiconductor having a second doping, the second doping being different from the first doping, the first segment (15) and the second segment (20) forming a pn junction, the pn junction comprising a depletion region (70) in the first segment (15), the contacts (25, 30) are configured such that when a voltage (V1) is applied across the contacts (25, 30), the size of the depletion region (70) depends on the value of the voltage, the dopants of the second segment (20) defining ionization energy. The device (10) comprises an emitter (40) that generates radiation having an energy greater than the ionization energy and irradiates the second section (20) with the radiation. 本发明涉及一种器件(10)，所述器件(10)包括第一段(15)、第二段(20)、第一接触件(25)和第二接触件(30)，第一段(15)由具有第一掺杂的半导体制成，第二段(20)由具