Vertical cavity surface emitting laser with 2D material layer and preparation method

The invention discloses a vertical cavity surface emitting laser with a 2D material layer. The 2D material layer is formed on a substrate; the Van der Waals epitaxial layer is formed on the 2D material layer and is a III-V group compound or a III group nitride, and the material of the Van der Waals...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WANG XIAOLEI, SHIH NENG-TAI, SONG GAOMEI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a vertical cavity surface emitting laser with a 2D material layer. The 2D material layer is formed on a substrate; the Van der Waals epitaxial layer is formed on the 2D material layer and is a III-V group compound or a III group nitride, and the material of the Van der Waals epitaxial layer is different from that of the substrate; the bottom dielectric DBR is formed on a partial region of the substrate or a partial surface of the Van der Waals epitaxial layer, the dielectric DBR is used as a lateral epitaxial shield, and the lateral epitaxial layer is combined with the n-type/p-type doping layer to cover the bottom dielectric DBR and the Van der Waals epitaxial layer; the active layer is formed on the n-type/p-type doped layer; the p-type/n-type doped layer is formed on the active layer; the top DBR is formed on the p-type/n-type doped layer; the n electrode and the p electrode are mounted on the n-type doped layer and the p-type doped layer, respectively. The invention also provides a