Photodiode and manufacturing method thereof

The invention relates to a photodiode and a manufacturing method thereof. The manufacturing method comprises the following steps: forming a plurality of grooves extending into an epitaxial layer, wherein the epitaxial layer has a first doping type; and performing an ion implantation process on the epitaxial layer to form an integrated collection layer with a second doping type, the collection layer including a plurality of first collection regions staggered with the plurality of grooves and a plurality of second collection regions extending into the epitaxial layer from the bottom ends of the grooves. According to the method, the photodiode with high quantum efficiency and high response speed can be realized. 本公开涉及光电二极管及其制造方法。该制造方法包括：形成延伸入外延层的多个凹槽，外延层具有第一掺杂类型；及对外延层进行离子注入工艺，形成具有第二掺杂类型的一体式的收集层，其中，收集层包括与多个凹槽交错设置的多个第一收集区域及多个从凹槽的底端延伸入外延层的第二收集区域。该方法可以实现量子效率高且响应速度快的光电二极管。