Low-leakage-current silicon carbide MOSFET cellular structure and device

The invention discloses a low-leakage-current silicon carbide MOSFET cellular structure and device, a planar grid electrode or a grid electrode bus and a field oxide layer are introduced into a JFET, the structure of a traditional JFET is changed, the planar grid electrode or the grid electrode bus...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HONG TAO, JIANG LIDA, ZHU YANGYANG, LIU HAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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