Low-leakage-current silicon carbide MOSFET cellular structure and device

The invention discloses a low-leakage-current silicon carbide MOSFET cellular structure and device, a planar grid electrode or a grid electrode bus and a field oxide layer are introduced into a JFET, the structure of a traditional JFET is changed, the planar grid electrode or the grid electrode bus is matched with a first conductive type semiconductor below the planar grid electrode or the grid electrode bus, and when power is on, the planar grid electrode or the grid electrode bus and the first conductive type semiconductor below the planar grid electrode or the grid electrode bus are separated from each other. Under the action of an electric field, the first conductive type semiconductor is inverted, so that pinch-off is realized, leakage current during pinch-off can be effectively reduced, and high current density and low on-resistance can be generated. According to the invention, the planar grid electrode or the grid electrode bus is vertical or parallel to the groove grid electrode to form a plurality of