SUBSTRATE PROCESSING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS

The invention provides a substrate processing method, a semiconductor device manufacturing method, a recording medium, and a substrate processing apparatus, which can provide a technology for improving device characteristics. The method comprises: (a) a step for supplying a gas containing a first halogen element to a substrate; (b) supplying a gas containing a second halogen element to the substrate; (c) a step of supplying a modifying gas to the substrate; (d) supplying a gas containing a third halogen element to the substrate; (e) a step in which (a) and (b) are performed a predetermined number of times and the substrate is processed; and (f) processing the substrate by performing (c) and (d) a predetermined number of times. 本发明提供一种基板处理方法、半导体装置的制造方法、记录介质及基板处理装置，能够提供提高器件特性的技术。具有：(a)向基板供给含第一卤元素气体的工序；(b)向所述基板供给含第二卤元素气体的工序；(c)向所述基板供给改性气体的工序；(d)向所述基板供给含第三卤元素气体的工序；(e)将(a)和(b)进行规定次数，对所述基板进行处理的工序；以及(f)将(c)和(d)进行规定次数，对所述基板进行处理的工序。