Junction temperature detection circuit of insulated gate bipolar transistor
The invention provides a junction temperature detection circuit of an insulated gate bipolar transistor, and belongs to the technical field of electronic circuits. The junction temperature detection circuit comprises a sampling module, a peak value detection module, a reset module, a gate-level driv...
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| creator | JIANG HUI XIE XIAOBO QIAN CHAO CAI ZHIRUI LIU CHAOJI |
| description | The invention provides a junction temperature detection circuit of an insulated gate bipolar transistor, and belongs to the technical field of electronic circuits. The junction temperature detection circuit comprises a sampling module, a peak value detection module, a reset module, a gate-level driving unit, a gate-level driving resistor and an insulated gate bipolar transistor. Wherein the gate-level driving unit is used for driving the insulated gate bipolar transistor to be conducted when the insulated gate bipolar transistor does not reach the peak voltage, driving the insulated gate bipolar transistor to be disconnected when the insulated gate bipolar transistor reaches the peak voltage, and driving the reset module to be conducted at the same time; the peak detection module is used for outputting the obtained amplified voltage signal when the reset module is switched on; the sampling module is used for amplifying and outputting voltage signals at the two ends of the gate-level driving resistor; and the |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN117741379A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN117741379A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN117741379A3</originalsourceid><addsrcrecordid>eNqNikEKAjEMAHvxIOof4gM8lBWKR1kUUfDkfYndrAS6aUnT_yvoA7zMwDBLd7s2icZZwGgupGhNCUYy-tbIGhsb5AlYaktoNMLrQ3hyyQkVTFEqV8u6dosJU6XNzyu3PZ8e_WVHJQ9UC0YSsqG_ex_C3nfhcOz-ed7U9TZt</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Junction temperature detection circuit of insulated gate bipolar transistor</title><source>esp@cenet</source><creator>JIANG HUI ; XIE XIAOBO ; QIAN CHAO ; CAI ZHIRUI ; LIU CHAOJI</creator><creatorcontrib>JIANG HUI ; XIE XIAOBO ; QIAN CHAO ; CAI ZHIRUI ; LIU CHAOJI</creatorcontrib><description>The invention provides a junction temperature detection circuit of an insulated gate bipolar transistor, and belongs to the technical field of electronic circuits. The junction temperature detection circuit comprises a sampling module, a peak value detection module, a reset module, a gate-level driving unit, a gate-level driving resistor and an insulated gate bipolar transistor. Wherein the gate-level driving unit is used for driving the insulated gate bipolar transistor to be conducted when the insulated gate bipolar transistor does not reach the peak voltage, driving the insulated gate bipolar transistor to be disconnected when the insulated gate bipolar transistor reaches the peak voltage, and driving the reset module to be conducted at the same time; the peak detection module is used for outputting the obtained amplified voltage signal when the reset module is switched on; the sampling module is used for amplifying and outputting voltage signals at the two ends of the gate-level driving resistor; and the</description><language>chi ; eng</language><subject>MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; TESTING</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240322&DB=EPODOC&CC=CN&NR=117741379A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240322&DB=EPODOC&CC=CN&NR=117741379A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JIANG HUI</creatorcontrib><creatorcontrib>XIE XIAOBO</creatorcontrib><creatorcontrib>QIAN CHAO</creatorcontrib><creatorcontrib>CAI ZHIRUI</creatorcontrib><creatorcontrib>LIU CHAOJI</creatorcontrib><title>Junction temperature detection circuit of insulated gate bipolar transistor</title><description>The invention provides a junction temperature detection circuit of an insulated gate bipolar transistor, and belongs to the technical field of electronic circuits. The junction temperature detection circuit comprises a sampling module, a peak value detection module, a reset module, a gate-level driving unit, a gate-level driving resistor and an insulated gate bipolar transistor. Wherein the gate-level driving unit is used for driving the insulated gate bipolar transistor to be conducted when the insulated gate bipolar transistor does not reach the peak voltage, driving the insulated gate bipolar transistor to be disconnected when the insulated gate bipolar transistor reaches the peak voltage, and driving the reset module to be conducted at the same time; the peak detection module is used for outputting the obtained amplified voltage signal when the reset module is switched on; the sampling module is used for amplifying and outputting voltage signals at the two ends of the gate-level driving resistor; and the</description><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNikEKAjEMAHvxIOof4gM8lBWKR1kUUfDkfYndrAS6aUnT_yvoA7zMwDBLd7s2icZZwGgupGhNCUYy-tbIGhsb5AlYaktoNMLrQ3hyyQkVTFEqV8u6dosJU6XNzyu3PZ8e_WVHJQ9UC0YSsqG_ex_C3nfhcOz-ed7U9TZt</recordid><startdate>20240322</startdate><enddate>20240322</enddate><creator>JIANG HUI</creator><creator>XIE XIAOBO</creator><creator>QIAN CHAO</creator><creator>CAI ZHIRUI</creator><creator>LIU CHAOJI</creator><scope>EVB</scope></search><sort><creationdate>20240322</creationdate><title>Junction temperature detection circuit of insulated gate bipolar transistor</title><author>JIANG HUI ; XIE XIAOBO ; QIAN CHAO ; CAI ZHIRUI ; LIU CHAOJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN117741379A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>JIANG HUI</creatorcontrib><creatorcontrib>XIE XIAOBO</creatorcontrib><creatorcontrib>QIAN CHAO</creatorcontrib><creatorcontrib>CAI ZHIRUI</creatorcontrib><creatorcontrib>LIU CHAOJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JIANG HUI</au><au>XIE XIAOBO</au><au>QIAN CHAO</au><au>CAI ZHIRUI</au><au>LIU CHAOJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Junction temperature detection circuit of insulated gate bipolar transistor</title><date>2024-03-22</date><risdate>2024</risdate><abstract>The invention provides a junction temperature detection circuit of an insulated gate bipolar transistor, and belongs to the technical field of electronic circuits. The junction temperature detection circuit comprises a sampling module, a peak value detection module, a reset module, a gate-level driving unit, a gate-level driving resistor and an insulated gate bipolar transistor. Wherein the gate-level driving unit is used for driving the insulated gate bipolar transistor to be conducted when the insulated gate bipolar transistor does not reach the peak voltage, driving the insulated gate bipolar transistor to be disconnected when the insulated gate bipolar transistor reaches the peak voltage, and driving the reset module to be conducted at the same time; the peak detection module is used for outputting the obtained amplified voltage signal when the reset module is switched on; the sampling module is used for amplifying and outputting voltage signals at the two ends of the gate-level driving resistor; and the</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING |
| title | Junction temperature detection circuit of insulated gate bipolar transistor |
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