Junction temperature detection circuit of insulated gate bipolar transistor

The invention provides a junction temperature detection circuit of an insulated gate bipolar transistor, and belongs to the technical field of electronic circuits. The junction temperature detection circuit comprises a sampling module, a peak value detection module, a reset module, a gate-level driving unit, a gate-level driving resistor and an insulated gate bipolar transistor. Wherein the gate-level driving unit is used for driving the insulated gate bipolar transistor to be conducted when the insulated gate bipolar transistor does not reach the peak voltage, driving the insulated gate bipolar transistor to be disconnected when the insulated gate bipolar transistor reaches the peak voltage, and driving the reset module to be conducted at the same time; the peak detection module is used for outputting the obtained amplified voltage signal when the reset module is switched on; the sampling module is used for amplifying and outputting voltage signals at the two ends of the gate-level driving resistor; and the