Deposition of thick silicon dioxide layers

Embodiments of the invention relate to deposition of thick silicon dioxide layers. A method of depositing silicon dioxide onto a substrate by plasma enhanced chemical vapor deposition (PECVD), a substrate having at least one silicon dioxide layer deposited thereon, and a plasma enhanced chemical vap...

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Bibliographische Detailangaben
Hauptverfasser:	JONES, CLARE, LOUISE, EDMUNDS MICHAEL, REUL WERNER, GOMEZ SANCHEZ DAVID, CROOKE KAREN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Embodiments of the invention relate to deposition of thick silicon dioxide layers. A method of depositing silicon dioxide onto a substrate by plasma enhanced chemical vapor deposition (PECVD), a substrate having at least one silicon dioxide layer deposited thereon, and a plasma enhanced chemical vapor deposition apparatus for depositing silicon dioxide onto a substrate by plasma enhanced chemical vapor deposition are provided. 本申请案的实施例涉及二氧化硅厚层的沉积。提供一种通过等离子体增强化学气相沉积PECVD将二氧化硅沉积到衬底上的方法、一种上面沉积有至少一个二氧化硅层的衬底以及一种用于通过等离子体增强化学气相沉积将二氧化硅沉积到衬底上的等离子体增强化学气相沉积设备。