High-pressure substrate processing apparatus
The present invention provides a high-pressure substrate processing apparatus, including: a first chamber formed to accommodate an object to be processed; a second chamber formed to heat the first chamber in a state of surrounding the first chamber; a third chamber provided with a (3-1) th chamber d...
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| creator | LIN GENRONG MIN BINHONG |
| description | The present invention provides a high-pressure substrate processing apparatus, including: a first chamber formed to accommodate an object to be processed; a second chamber formed to heat the first chamber in a state of surrounding the first chamber; a third chamber provided with a (3-1) th chamber disposed so as to surround a part of the second chamber and a (3-2) th chamber disposed so as to surround another part of the second chamber; and a gas supply module configured to supply a process gas for processing the object into the first chamber at a first pressure, to supply a shielding gas into a space between the second chamber and the first chamber at a second pressure set in accordance with the first pressure, and to supply the shielding gas into the space between the second chamber and the first chamber at a second pressure set in accordance with the second pressure. In order to prevent outside air from flowing into the third chamber, a defence gas is supplied to a space between the second chamber and each |
| format | Patent |
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In order to prevent outside air from flowing into the third chamber, a defence gas is supplied to a space between the second chamber and each</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240319&DB=EPODOC&CC=CN&NR=117727654A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240319&DB=EPODOC&CC=CN&NR=117727654A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIN GENRONG</creatorcontrib><creatorcontrib>MIN BINHONG</creatorcontrib><title>High-pressure substrate processing apparatus</title><description>The present invention provides a high-pressure substrate processing apparatus, including: a first chamber formed to accommodate an object to be processed; a second chamber formed to heat the first chamber in a state of surrounding the first chamber; a third chamber provided with a (3-1) th chamber disposed so as to surround a part of the second chamber and a (3-2) th chamber disposed so as to surround another part of the second chamber; and a gas supply module configured to supply a process gas for processing the object into the first chamber at a first pressure, to supply a shielding gas into a space between the second chamber and the first chamber at a second pressure set in accordance with the first pressure, and to supply the shielding gas into the space between the second chamber and the first chamber at a second pressure set in accordance with the second pressure. 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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | High-pressure substrate processing apparatus |
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