High-pressure substrate processing apparatus

The present invention provides a high-pressure substrate processing apparatus, including: a first chamber formed to accommodate an object to be processed; a second chamber formed to heat the first chamber in a state of surrounding the first chamber; a third chamber provided with a (3-1) th chamber disposed so as to surround a part of the second chamber and a (3-2) th chamber disposed so as to surround another part of the second chamber; and a gas supply module configured to supply a process gas for processing the object into the first chamber at a first pressure, to supply a shielding gas into a space between the second chamber and the first chamber at a second pressure set in accordance with the first pressure, and to supply the shielding gas into the space between the second chamber and the first chamber at a second pressure set in accordance with the second pressure. In order to prevent outside air from flowing into the third chamber, a defence gas is supplied to a space between the second chamber and each