Method for producing specific termination angle in titanium tungsten layer
The invention relates to a method for manufacturing a specific termination angle in a titanium tungsten layer. In described examples, a method of forming a termination angle in a titanium tungsten layer includes providing a titanium tungsten layer (702) and applying a photoresist material to the tit...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a method for manufacturing a specific termination angle in a titanium tungsten layer. In described examples, a method of forming a termination angle in a titanium tungsten layer includes providing a titanium tungsten layer (702) and applying a photoresist material to the titanium tungsten layer (704). The photoresist material is exposed under a defocused condition to generate an etch resist mask (706). An edge of the exposed photoresist material corresponds to the inclined termination. The titanium tungsten layer is etched using an etching material. The etching material at least partially etches the photoresist material exposed under the defocused condition. The etching results in a sloped termination in the titanium tungsten layer (708).
本申请涉及用于制造钛钨层中的特定终端角的方法。在描述的示例中,一种形成钛钨层中的终端角的方法包括提供钛钨层(702)以及将光致抗蚀刻材料施加到钛钨层(704)。光致抗蚀刻材料在散焦条件下经暴露生成抗蚀刻掩膜(706)。暴露的光致抗蚀刻材料的边缘对应于倾斜终端。使用蚀刻材料蚀刻钛钨层。蚀刻材料至少部分地蚀刻在散焦条件下被暴露的光致抗蚀刻材料。蚀刻导致钛钨层中的倾斜终端(708)。 |
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