Method for preparing N-TOPCon crystalline silicon solar cell through back processing method

The invention belongs to the technical field of solar cells, and particularly relates to a method for preparing an N-TOPCon solar cell by a back surface treatment method, which is characterized by comprising the following steps of: (1) cleaning and texturing; (2) front boron diffusion; (3) a back surface treatment method; (4) preparing a tunneling oxidation passivation structure; (5) cleaning the front surface and removing winding plating on the front surface; wherein the back surface treatment method in the step (3) specifically comprises the following steps: (a) back surface acid pickling; (b) etching; (c) polishing; and (d) micro texturing. Through the back surface treatment method, back surface recombination can be reduced, and meanwhile, the back surface contact resistance is reduced, so that the efficiency of the battery is effectively improved. The product prepared by the invention has better effects of balancing open voltage, current and filling, and meanwhile, the problem of electric leakage is reduc