Semiconductor power device with improved durability

Aspects of the present disclosure relate to a semiconductor power device, in particular to a silicon carbide (SiC) hybrid P-I-N Schottky (MPS) diode. The apparatus includes an active region and a terminal region adjacent to the active region. The termination region includes a first ring having a first polarity. By including a second ring having a second polarity opposite the first polarity, a reduced effect of the interface charge on the performance of the semiconductor power device can be observed. 本公开的各方面涉及一种半导体功率装置，特别地涉及一种碳化硅(SiC)混合式P-I-N肖特基(MPS)二极管。该装置包括有源区域和与有源区域相邻的终端区域。终端区域包括具有第一极性的第一环。通过包括具有与第一极性相反的第二极性的第二环，可以观察到界面电荷对半导体功率装置的性能的减小的影响。