Method for improving Efuse uniformity

The invention provides a method for improving Efuse uniformity. A wafer comprises an anode structure used for forming an Efuse anode and a cathode structure used for forming an efuse cathode. The cathode structure is covered with an oxide layer and a SiN layer formed on the oxide layer; photoresist is spin-coated on the wafer, and exposure and development are carried out; wherein a region of the cathode structure is not developed; performing SAB etching on the wafer, wherein etching is not performed because the region of the cathode structure is covered by the photoresist; removing the photoresist on the cathode structure, and then removing an oxide layer from the SAB etched region of the wafer; a metal silicide is formed on the anode structure. According to the invention, SAB silicon nitride in the prior art is utilized to protect the Efuse cathode, so that the cathode forms a metal-free silicide structure in the subsequent process, the uniformity of the resistance value after Efuse programming is obviously