Method for growing large-area tungsten disulfide film on strontium titanate substrate

The invention provides a method for growing a large-area tungsten disulfide film on a strontium titanate substrate, which is characterized in that an alkali metal salt assisted low-pressure chemical vapor deposition method is adopted, the strontium titanate substrate is selected, and a mixture of WO...

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Bibliographische Detailangaben
Hauptverfasser:	LI SHENGBING, LIAO XIAXIA, HU XIANG, ZHOU YANGBO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention provides a method for growing a large-area tungsten disulfide film on a strontium titanate substrate, which is characterized in that an alkali metal salt assisted low-pressure chemical vapor deposition method is adopted, the strontium titanate substrate is selected, and a mixture of WO3, NaBr and elemental sulfur powder in a certain ratio is used as a precursor source to prepare the large-area tungsten disulfide film. According to the method for growing the large-area tungsten disulfide thin film on the strontium titanate substrate, the tungsten disulfide thin film is prepared on the strontium titanate substrate through a chemical vapor deposition method, the obtained tungsten disulfide thin film has the advantages of being large in area, good in uniformity, good in crystallinity and the like, and the method is high in repeatability, easy to operate, short in consumed time, high in efficiency and suitable for industrial production. And large-scale production and application can be realized. 本发明提