High-haze conductive film and single-process preparation method thereof
The invention relates to a high-haze conductive film and a single-process preparation method thereof. The single-process preparation method comprises the following steps: step S1, cleaning float high-transmittance glass by adopting an alkali liquor, an acid liquor or an ion beam etching method; s2,...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | WANG TIANQI JIN KEWU WANG DONG YAO TINGTING PENG SHOU YANG YANG LI GANG WANG JINLEI PENG SAIAO |
| description | The invention relates to a high-haze conductive film and a single-process preparation method thereof. The single-process preparation method comprises the following steps: step S1, cleaning float high-transmittance glass by adopting an alkali liquor, an acid liquor or an ion beam etching method; s2, adopting a magnetron sputtering method, using a high-purity AZO target material, and preparing an AZO seed crystal in an air atmosphere with a certain concentration; s3, a sputtering power supply is turned off, high-vacuum air exhaust is carried out, and oxygen existing in the cavity is removed; s4, a magnetron sputtering method is adopted, a high-purity AZO target material is used, pre-sputtering is carried out in an oxygen-free environment, and then film coating is carried out; and S5, naturally cooling the coated glass to room temperature to obtain the high-haze AZO conductive film. The invention provides a simple and rapid process method for producing and manufacturing the high-haze AZO conductive film, and con |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN117702064A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN117702064A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN117702064A3</originalsourceid><addsrcrecordid>eNqNyjEOwiAUBmAWB6Pe4XkAklaNnU2jdnJyb17gbyGhPALo4OldPIDTt3xrdR_87LTjD8hItC9T_Rs0-bAQR0vFxzlApywGpVDKSJy5eom0oDqxVB0yZNqq1cShYPdzo_a367MfNJKMKIkNIurYP9q265pDcz5djv-cL33WNCs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>High-haze conductive film and single-process preparation method thereof</title><source>esp@cenet</source><creator>WANG TIANQI ; JIN KEWU ; WANG DONG ; YAO TINGTING ; PENG SHOU ; YANG YANG ; LI GANG ; WANG JINLEI ; PENG SAIAO</creator><creatorcontrib>WANG TIANQI ; JIN KEWU ; WANG DONG ; YAO TINGTING ; PENG SHOU ; YANG YANG ; LI GANG ; WANG JINLEI ; PENG SAIAO</creatorcontrib><description>The invention relates to a high-haze conductive film and a single-process preparation method thereof. The single-process preparation method comprises the following steps: step S1, cleaning float high-transmittance glass by adopting an alkali liquor, an acid liquor or an ion beam etching method; s2, adopting a magnetron sputtering method, using a high-purity AZO target material, and preparing an AZO seed crystal in an air atmosphere with a certain concentration; s3, a sputtering power supply is turned off, high-vacuum air exhaust is carried out, and oxygen existing in the cavity is removed; s4, a magnetron sputtering method is adopted, a high-purity AZO target material is used, pre-sputtering is carried out in an oxygen-free environment, and then film coating is carried out; and S5, naturally cooling the coated glass to room temperature to obtain the high-haze AZO conductive film. The invention provides a simple and rapid process method for producing and manufacturing the high-haze AZO conductive film, and con</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CABLES ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CONDUCTORS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; GLASS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INSULATORS ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; METALLURGY ; MINERAL OR SLAG WOOL ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240315&DB=EPODOC&CC=CN&NR=117702064A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240315&DB=EPODOC&CC=CN&NR=117702064A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WANG TIANQI</creatorcontrib><creatorcontrib>JIN KEWU</creatorcontrib><creatorcontrib>WANG DONG</creatorcontrib><creatorcontrib>YAO TINGTING</creatorcontrib><creatorcontrib>PENG SHOU</creatorcontrib><creatorcontrib>YANG YANG</creatorcontrib><creatorcontrib>LI GANG</creatorcontrib><creatorcontrib>WANG JINLEI</creatorcontrib><creatorcontrib>PENG SAIAO</creatorcontrib><title>High-haze conductive film and single-process preparation method thereof</title><description>The invention relates to a high-haze conductive film and a single-process preparation method thereof. The single-process preparation method comprises the following steps: step S1, cleaning float high-transmittance glass by adopting an alkali liquor, an acid liquor or an ion beam etching method; s2, adopting a magnetron sputtering method, using a high-purity AZO target material, and preparing an AZO seed crystal in an air atmosphere with a certain concentration; s3, a sputtering power supply is turned off, high-vacuum air exhaust is carried out, and oxygen existing in the cavity is removed; s4, a magnetron sputtering method is adopted, a high-purity AZO target material is used, pre-sputtering is carried out in an oxygen-free environment, and then film coating is carried out; and S5, naturally cooling the coated glass to room temperature to obtain the high-haze AZO conductive film. The invention provides a simple and rapid process method for producing and manufacturing the high-haze AZO conductive film, and con</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CONDUCTORS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>GLASS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INSULATORS</subject><subject>JOINING GLASS TO GLASS OR OTHER MATERIALS</subject><subject>METALLURGY</subject><subject>MINERAL OR SLAG WOOL</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</subject><subject>SURFACE TREATMENT OF GLASS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEOwiAUBmAWB6Pe4XkAklaNnU2jdnJyb17gbyGhPALo4OldPIDTt3xrdR_87LTjD8hItC9T_Rs0-bAQR0vFxzlApywGpVDKSJy5eom0oDqxVB0yZNqq1cShYPdzo_a367MfNJKMKIkNIurYP9q265pDcz5djv-cL33WNCs</recordid><startdate>20240315</startdate><enddate>20240315</enddate><creator>WANG TIANQI</creator><creator>JIN KEWU</creator><creator>WANG DONG</creator><creator>YAO TINGTING</creator><creator>PENG SHOU</creator><creator>YANG YANG</creator><creator>LI GANG</creator><creator>WANG JINLEI</creator><creator>PENG SAIAO</creator><scope>EVB</scope></search><sort><creationdate>20240315</creationdate><title>High-haze conductive film and single-process preparation method thereof</title><author>WANG TIANQI ; JIN KEWU ; WANG DONG ; YAO TINGTING ; PENG SHOU ; YANG YANG ; LI GANG ; WANG JINLEI ; PENG SAIAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN117702064A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CONDUCTORS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>GLASS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INSULATORS</topic><topic>JOINING GLASS TO GLASS OR OTHER MATERIALS</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</topic><topic>SURFACE TREATMENT OF GLASS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>WANG TIANQI</creatorcontrib><creatorcontrib>JIN KEWU</creatorcontrib><creatorcontrib>WANG DONG</creatorcontrib><creatorcontrib>YAO TINGTING</creatorcontrib><creatorcontrib>PENG SHOU</creatorcontrib><creatorcontrib>YANG YANG</creatorcontrib><creatorcontrib>LI GANG</creatorcontrib><creatorcontrib>WANG JINLEI</creatorcontrib><creatorcontrib>PENG SAIAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WANG TIANQI</au><au>JIN KEWU</au><au>WANG DONG</au><au>YAO TINGTING</au><au>PENG SHOU</au><au>YANG YANG</au><au>LI GANG</au><au>WANG JINLEI</au><au>PENG SAIAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High-haze conductive film and single-process preparation method thereof</title><date>2024-03-15</date><risdate>2024</risdate><abstract>The invention relates to a high-haze conductive film and a single-process preparation method thereof. The single-process preparation method comprises the following steps: step S1, cleaning float high-transmittance glass by adopting an alkali liquor, an acid liquor or an ion beam etching method; s2, adopting a magnetron sputtering method, using a high-purity AZO target material, and preparing an AZO seed crystal in an air atmosphere with a certain concentration; s3, a sputtering power supply is turned off, high-vacuum air exhaust is carried out, and oxygen existing in the cavity is removed; s4, a magnetron sputtering method is adopted, a high-purity AZO target material is used, pre-sputtering is carried out in an oxygen-free environment, and then film coating is carried out; and S5, naturally cooling the coated glass to room temperature to obtain the high-haze AZO conductive film. The invention provides a simple and rapid process method for producing and manufacturing the high-haze AZO conductive film, and con</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN117702064A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CABLES CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | High-haze conductive film and single-process preparation method thereof |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T16%3A33%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WANG%20TIANQI&rft.date=2024-03-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN117702064A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |