Preparation method of metal-doped copper interconnection wire

The invention discloses a preparation method of a metal-doped copper interconnection wire. The preparation method comprises the step of carrying out thermal annealing treatment on a metal-doped copper film, the temperature rising speed in the thermal annealing treatment is 5-100 DEG C/min; the annea...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JU SHENGHONG, XU JIANG, SU HONGWEI, WU YUNWEN, LEE, JUNG OK, JIN XINYU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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