Preparation method of metal-doped copper interconnection wire

The invention discloses a preparation method of a metal-doped copper interconnection wire. The preparation method comprises the step of carrying out thermal annealing treatment on a metal-doped copper film, the temperature rising speed in the thermal annealing treatment is 5-100 DEG C/min; the annealing temperature in the thermal annealing treatment is 200-600 DEG C; the heat preservation time in the thermal annealing treatment is 5 minutes to 10 hours. According to the obtained metal-doped copper interconnection structure, the doped metal atoms are mainly segregated at the grain boundary position of the copper plating layer, the overall stable structure is formed, and the electromigration resistance of copper is improved; and meanwhile, the equivalent negative potential of the copper grain boundary is neutralized, so that scattering of electrons at the grain boundary is reduced, the resistance is finally reduced, and the resistivity of copper interconnection is reduced. 本发明公开了一种金属掺杂的铜互连线的制备方法，其包括：将铜的金属掺杂薄膜进行