Semiconductor device

A semiconductor device includes: a chip having a main surface; a first potential region formed in a surface layer portion of the main surface; a second potential region formed in a surface layer portion of the main surface at a distance from the first potential region; a drift region of a first cond...

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1. Verfasser: FUJIE SHUSAKU
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A semiconductor device includes: a chip having a main surface; a first potential region formed in a surface layer portion of the main surface; a second potential region formed in a surface layer portion of the main surface at a distance from the first potential region; a drift region of a first conductivity type formed in a region between the first potential region and the second potential region in a surface layer portion of the main surface; and a plurality of reduced surface field arrays each including a plurality of reduced surface field regions of a first conductivity type, the plurality of reduced surface field regions being arranged at intervals in a first direction in a surface layer portion of the drift region so that a part of the drift region is exposed from the main surface. A plurality of reduced surface electric field arrays each having a higher impurity concentration than the drift region, the plurality of reduced surface electric field arrays being arranged at intervals in a second direction i