Semiconductor structure, forming method thereof and memory

The invention relates to the technical field of semiconductors, and relates to a semiconductor structure and a forming method thereof, and a memory, the semiconductor structure comprises a substrate and a word line structure, the substrate comprises an array region and a peripheral region; the word line structure comprises a first conductive layer located in the substrate, and the first conductive layer penetrates through the array region in the first direction and extends to the peripheral region; in the direction perpendicular to the substrate, the height of the first conductive layer on the surface of the peripheral region is higher than that of the first conductive layer on the surface of the array region. According to the semiconductor structure, the process difficulty can be reduced, and the product yield can be improved. 本公开是关于半导体技术领域，涉及一种半导体结构及其形成方法、存储器，本公开的半导体结构包括衬底及字线结构，其中：衬底包括阵列区和外围区；字线结构包括位于衬底内部的第一导电层，第一导电层沿第一方向贯穿阵列区并延伸至外围区；在垂直于衬底的方向上，第一导电层位于外围区表面的高度高于第一导电层位于阵列区表面的高度。本公开的半导体结构可降低工艺难度，提高产品良率。