AlGaN-based deep ultraviolet LED chip preparation method and LED chip

The invention provides a preparation method of an AlGaN-based deep ultraviolet LED chip, and the method comprises the steps: providing a semi-finished LED chip with a manufactured N-type electrode, and the N-type electrode comprises an Al layer structure for stacking; carrying out annealing on the semi-finished LED chip, so as to carry out annealing treatment on the N-type electrode on the semi-finished LED chip; wherein the thickness of the Al layer ranges from 30 nm to 120 nm, and the annealing temperature of the N-type electrode ranges from 750 DEG C to 950 DEG C. According to the invention, the problem of low photoelectric conversion efficiency of the LED chip in the prior art is solved. 本发明提供一种AlGaN基深紫外LED芯片制备方法，所述方法包括：提供一制作好N型电极的半成品LED芯片，所述N型电极包含用于堆叠的Al层结构；将所述半成品LED芯片进行退火，以对所述半成品LED芯片上的所述N型电极进行退火处理；其中，Al层的厚度为30nm-120nm，N型电极的退火温度为750℃-950℃。本发明解决了现有技术中的LED芯片光电转换效率低的问题。