Display device including oxide semiconductor pattern

The invention relates to a display device including an oxide semiconductor pattern. The present disclosure provides a driving thin film transistor and a switching thin film transistor using an oxide semiconductor pattern as an active layer. Each of the driving thin film transistor and the switching thin film transistor includes a light shielding pattern. The shading pattern comprises a semiconductor material layer doped with P-type impurity ions. By means of a light shielding pattern including the semiconductor material layer, each of the driving thin film transistor and the switching thin film transistor exhibits an increase in threshold voltage, and thereby ensures a degree of freedom in circuit design. 本公开涉及包括氧化物半导体图案的显示装置。本公开提供了使用氧化物半导体图案作为有源层的驱动薄膜晶体管和开关薄膜晶体管。所述驱动薄膜晶体管和开关薄膜晶体管中的每者包括遮光图案。该遮光图案包括掺杂有P型杂质离子的半导体材料层。借助于包括该半导体材料层的遮光图案，所述驱动薄膜晶体管和开关薄膜晶体管中的每者表现出阈值电压的提高，并且照此确保了电路设计的自由度。