INTEGRATED CIRCUIT DEVICE INCLUDING BACKSIDE POWER

Integrated circuit devices and methods of forming the same are provided. The integrated circuit device may include: a lower insulating structure; a transistor on the lower insulating structure, the transistor including a source/drain region; a power rail structure in the lower insulation structure; and a power contact structure on the power rail structure and electrically connecting the source/drain region to the power rail structure. The power contact structure may include a lower portion in the power rail structure. 提供了集成电路器件及其形成方法。集成电路器件可以包括：下绝缘结构；在下绝缘结构上的晶体管，该晶体管包括源极/漏极区；在下绝缘结构中的电源轨结构；以及电源接触结构，在电源轨结构上并将源极/漏极区电连接到电源轨结构。电源接触结构可以包括在电源轨结构中的下部。