Silicon carbide groove type MOSFET device and preparation process thereof

The invention relates to the field of silicon carbide MOSFET device manufacturing, and discloses a silicon carbide groove type MOSFET device and a preparation process. The method comprises the following steps: S1, providing a semiconductor substrate with a first surface and a second surface; s2, forming an epitaxial layer on the first surface; s3, depositing a first oxide layer on the epitaxial layer; s4, photoetching the first oxide layer to form a groove; s5, etching by taking the groove as a reference to form a groove; s6, removing the first oxide layer; s7, forming a second oxide layer in the epitaxial layer and the groove; s8, performing N-type doping injection in an inclined manner, and forming a JFET region in the epitaxial layer; s9, depositing polycrystalline silicon in the groove; s10, P-type doping injection is carried out in a vertical mode, and a Pwell region is formed in the epitaxial layer; the Pwell region covers a part of the JFET region; s11, performing ion implantation and annealing in the