Preparation method of modified element doped zinc-based alloy sputtering target material for semiconductor coating

The invention relates to a preparation method of a modified element doped zinc-based alloy sputtering target material for semiconductor coating, and belongs to the field of metal sputtering target material preparation. The preparation method comprises the steps of material preparation, alloying smelting, centrifugal casting forming, synchronous water-cooling rapid solidification, surface machining and the like. Round, rectangular and special-shaped target materials with different specifications and sizes can be prepared through inert gas flow protection smelting, high-frequency induction heating, immersion type feeding, uniform stirring of rotating blades, pressurizing type centrifugal casting, synchronous water-cooling rapid solidification and surface machining. The preparation method can solve the problem that active metal elements are difficult to be doped with the zinc-based sputtering target material, an alloy with high content of doped element components is obtained, the prepared target material has the