BOE etching solution for silicon oxide layer

In order to solve the problems that in the prior art, the etching rates of the inclined plane of the silicon oxide layer are different, a two-section angle is generated, and metal particles are not beneficial to being deposited on the surface of the inclined plane, the invention provides a BOE etching solution for the silicon oxide layer, the etching solution comprises hydrogen fluoride, ammonium fluoride, a fluorine-containing carboxylic acid compound, a cationic surfactant and water, the mass percentage content of the fluorine-containing carboxylic acid compound is 0.05%-0.30%, and the mass percentage content of the cationic surface active agent is 0.005%-0.050%; according to the BOE etching solution for the silicon oxide layer, the cationic surface active agent and the fluorine-containing carboxylic acid compound cooperate with each other, the rate difference between the bottom and the top of a silicon oxide inclined plane can be well reduced, the etching performance of the silicon oxide layer is achieved,