Resin for narrow-distribution 193nm deep ultraviolet photoresist as well as preparation method and application of resin

The invention belongs to the technical field of chemical engineering, and provides narrow-distribution 193nm deep ultraviolet photoresist resin as well as a preparation method and application thereof. According to the preparation method, the resin monomer and the main initiator are dissolved in the...

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Bibliographische Detailangaben
Hauptverfasser: GU DAGONG, XU, CHONGYING, LI PEIYUAN, SHEN BO, LU HANLIN, CHEN PENG, ZHANG YU, MAO ZHIBIAO
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention belongs to the technical field of chemical engineering, and provides narrow-distribution 193nm deep ultraviolet photoresist resin as well as a preparation method and application thereof. According to the preparation method, the resin monomer and the main initiator are dissolved in the solvent and subjected to free radical polymerization reaction under the heating condition, and the auxiliary initiator is added at the later stage of the reaction to promote the free radical polymerization reaction to be more uniform, so that the narrow-distribution resin for the 193nm deep ultraviolet photoresist is obtained; when the resin is used in the photoresist, the development contrast of the photoresist is facilitated. 本发明属于化工技术领域,提供了一种窄分布的193nm深紫外光刻胶用树脂及其制备方法和应用。本发明将树脂单体、主引发剂置于溶剂中溶解并在加热条件下发生自由基聚合反应,在反应后期加入副引发剂,促使自由基聚合反应更均一,得到了一种窄分布的193nm深紫外光刻胶用树脂;将该树脂用于光刻胶中,有利于光刻胶的显影对比度。