High density magnetoresistive random access memory device and method of manufacturing same

A high density magnetoresistive random access memory device having a second interlayer dielectric (ILD) layer, a cap layer covering an MRAM cell array region and a logic region, where the thickness of the second ILD layer in the MRAM cell array region is greater than the thickness in the logic region, and where the thickness of the second ILD layer in the logic region is greater than the thickness of the second ILD layer in the logic region. A composition of the second ILD layer in the logic region is different from a composition of the second ILD layer in the MRAM cell array region. 本发明公开一种高密度磁阻随机存取存储器器件及其制造方法，其中高密度MRAM器件具有第二层间电介质(ILD)层，覆盖MRAM单元阵列区和逻辑区内的盖层，其中第二ILD层在MRAM单元阵列区中的厚度大于在逻辑区中的厚度，第二ILD层在逻辑区的组成不同于第二ILD层在MRAM单元阵列区的组成。