Atomic layer etching method using ligand exchange reaction

The invention relates to an atomic layer etching method using a ligand exchange reaction. An atomic layer etching method using a ligand exchange reaction may include: a substrate providing step of placing a substrate having a thin film formed thereon into a reaction chamber; a halogenated thin film forming step of forming a halogenated thin film on the surface of the thin film by injecting a halogenated gas into the reaction chamber; and an etching step of etching the halogenated thin film by injecting a ligand containing no metal or metal precursor into the reaction chamber having the substrate including the halogenated thin film. 本公开涉及使用配体交换反应的原子层刻蚀方法。一种使用配体交换反应的原子层刻蚀方法可以包括：衬底提供步骤：将具有形成在其上的薄膜的衬底放入反应腔中；卤化薄膜形成步骤：通过向反应腔中注入卤化气体来在薄膜的表面上形成卤化薄膜；以及刻蚀步骤：通过向具有包括卤化薄膜的衬底的反应腔中注入不含有金属或金属前体的配体来刻蚀卤化薄膜。