Transverse epitaxial growth method of epitaxial layer with holes and epitaxial structure

The invention discloses a lateral epitaxial growth method of an epitaxial layer with holes and an epitaxial structure, and the lateral epitaxial growth method of the epitaxial layer with the holes comprises the steps: providing a single crystal substrate; and forming a mask plate on the single crystal substrate, and carrying out transverse epitaxial growth on the single crystal substrate containing the mask plate by regulating the size of the mask plate to obtain an epitaxial layer with holes of a preset size. According to the growth method of the epitaxial layer with the adjustable hole size in the epitaxial layer, the size of the hole is adjusted and controlled by adjusting and controlling the size of the mask plate, the epitaxial layer with the hole with the preset size is obtained through transverse epitaxial growth on the single crystal substrate containing the mask plate, the hole of the epitaxial layer can meet the specific size requirement, and the hole size of the epitaxial layer can be adjusted. And