Method for removing monofluoride to pentafluoride of molybdenum and manufacturing method of semiconductor device
The present invention relates to a method for removing MoFx, or MoFx and MoOFx, by bringing a halogen-containing gas into contact with a member deposited or covered with MoFx, or MoFx and MoOFx (where x represents a number greater than 0 and less than 6), to remove MoFx from the member, or MoFx and...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The present invention relates to a method for removing MoFx, or MoFx and MoOFx, by bringing a halogen-containing gas into contact with a member deposited or covered with MoFx, or MoFx and MoOFx (where x represents a number greater than 0 and less than 6), to remove MoFx from the member, or MoFx and MoOFx, and a method for manufacturing a semiconductor device including the same, and more particularly, to a method for removing MoFx, or MoFx and MoOFx, and to a method for manufacturing a semiconductor device including the same. A method of removing the deposit or the cover from a component deposited or covered with MoFx, or MoFx and MoOFx mixed in MoF6 in the form of an impurity, and a method of manufacturing a semiconductor device, including a step of removing the deposit or the cover from a semiconductor device manufacturing apparatus deposited or covered with MoFx, or MoFx and MoOFx, and a step of removing the deposit or the cover from the semiconductor device manufacturing apparatus deposited or covered with |
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