Surface control and growth method of AlGaN ultraviolet quantum well

The invention discloses an AlGaN ultraviolet quantum well surface regulation and growth method, which comprises the following steps: A, raising the surface temperature of a substrate to 900-1200 DEG C, setting the pressure to be 30-600 mbar, and growing a stress regulation layer on the substrate; b,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HE ZONGJIANG, ZHANG YANG, WANG YOULIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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