Surface control and growth method of AlGaN ultraviolet quantum well

The invention discloses an AlGaN ultraviolet quantum well surface regulation and growth method, which comprises the following steps: A, raising the surface temperature of a substrate to 900-1200 DEG C, setting the pressure to be 30-600 mbar, and growing a stress regulation layer on the substrate; b, the surface temperature of the substrate is adjusted to 1000 DEG C to 1200 DEG C, the pressure is set to be 50 mbar to 300 mbar, and a buffer layer grows on the stress regulation and control layer; and C, adjusting the surface temperature of the substrate to 700-1100 DEG C, setting the pressure to be 20-500 mbar, and continuously growing a multi-quantum well layer on the buffer layer under the condition of keeping the temperature unchanged. According to the AlGaN ultraviolet quantum well, the surface roughness of the AlGaN ultraviolet quantum well is reduced by adopting a continuous and same-temperature growth mode of the well and the barrier, so that the internal defects of the crystal are reduced, the crystal qu