Normal-temperature visible light and near-infrared light photoelectric detector based on SnS nanosheet and preparation method of normal-temperature visible light and near-infrared light photoelectric detector

The invention discloses a normal-temperature visible light and near-infrared light photoelectric detector based on SnS nanosheets and a preparation method of the normal-temperature visible light and near-infrared light photoelectric detector, and relates to the technical field of optoelectronic mate...

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Hauptverfasser:	WANG XINA, PENG XIAONIU, WANG SHOUYANG, ZHANG RONGHUA, CHU ZIYU, YUAN HUI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	The invention discloses a normal-temperature visible light and near-infrared light photoelectric detector based on SnS nanosheets and a preparation method of the normal-temperature visible light and near-infrared light photoelectric detector, and relates to the technical field of optoelectronic materials. A wet transfer method is adopted, and the deposited SnS nanosheets are transferred to the SiO2/Si substrate from the mica sheet; and etching a four-electrode pattern, and evaporating a Ti layer and an Au layer by using a high-vacuum composite deposition system to obtain the normal-temperature visible light and near-infrared light photoelectric detector based on the SnS nanosheet. The photoelectric detector provided by the invention can excite response to visible light of 532 nm at normal temperature (300 K), the light current in the Zigzag direction reaches 920 nA/mu m, the responsivity can reach 255 A/W, the light current in the Armchair direction reaches 586 nA/mu m, and the responsivity can reach 155 A/W.