Group III-V semiconductor photoelectric detector and light receiving module

The invention provides an III-V group semiconductor photoelectric detector which is applied to the field of semiconductor devices. The photoelectric detector sequentially comprises an upper electrode layer, an absorption layer and a lower electrode layer in the first direction. The upper electrode layer and the lower electrode layer are used for providing bias voltage for the absorption layer. The absorption layer is used for receiving optical signals and converting the optical signals into electric signals according to bias voltage. And a dielectric metasurface is arranged on the upper electrode layer. The dielectric metasurface is used for enabling an optical signal to generate resonance in the absorption layer. The photoelectric detector further comprises a dielectric layer. The absorption layer is arranged between the dielectric layer and the upper electrode layer. The projection of the dielectric layer on the upper electrode layer and the dielectric metasurface have an overlapping area. The refractive in