Semiconductor power and radio frequency device

The invention discloses a semiconductor power and radio frequency device which is characterized by comprising a substrate, a channel layer and a barrier layer from bottom to top, the saturated electron drift rate of the barrier layer is smaller than or equal to the saturated electron drift rate of the channel layer; the channel layer and the barrier layer both comprise more than one wide band gap compound semiconductor. According to the invention, the saturated electron drift rate of the barrier layer is smaller than or equal to that of the channel layer, channel electron scattering is reduced, and leakage current and on-resistance are reduced. 本发明公开一种半导体功率和射频器件，其特征在于，从下往上包括：衬底、沟道层和势垒层；所述势垒层的饱和电子漂移速率小于等于沟道层的饱和电子漂移速率；所述沟道层和所述势垒层均包括一种以上宽禁带化合物半导体。本发明使所述势垒层的饱和电子漂移速率小于等于沟道层的饱和电子漂移速率，降低沟道电子散射，降低泄漏电流和导通电阻。