Semiconductor element and manufacturing method thereof

The invention provides a semiconductor element and a manufacturing method thereof. The semiconductor element includes a plug and a via on the plug. The plug includes a tungsten plug and a conductive layer on the tungsten plug. The tungsten plug and the conductive layer comprise different materials. The tungsten plug has a first width in the lateral direction. The conductive layer has a second width in the lateral direction. The second width is greater than the first width. The through hole is electrically connected with the plug. The conductive layer is disposed between the through hole and the tungsten plug. 本公开提供一种半导体元件及其制造方法。半导体元件包括栓塞与在栓塞上的通孔。栓塞包括钨栓塞与在钨栓塞上的导电层。钨栓塞与导电层包括不同材料。钨栓塞具有在横方向上的第一宽度。导电层具有在横方向上的第二宽度。第二宽度大于等于第一宽度。通孔电性连接栓塞。导电层介于通孔与钨栓塞之间。