Substrate processing method and plasma processing apparatus

The invention provides a substrate processing method and a plasma processing apparatus capable of removing a metal-containing layer. In one exemplary embodiment, the substrate processing method includes: a step (a) of providing a substrate having a first region including a first material including silicon and a second region including a second material different from the first material; (b) forming a metal-containing layer on the first region and etching the second region by using plasma generated from a processing gas containing a halogen element and a metal; and (c) removing the metal-containing layer with a base. 本公开提供一种基板处理方法和等离子体处理装置，能够去除含金属层。在一个例示性的实施方式中，基板处理方法包括：工序(a)，提供基板，基板具备包含第一材料的第一区域和包含第二材料的第二区域，第一材料包含硅，第二材料与第一材料不同；工序(b)，利用从包含卤族元素和金属的处理气体生成的等离子体，在第一区域上形成含金属层，并且对第二区域进行蚀刻；以及工序(c)，利用碱将含金属层去除。