Method for improving surface roughness of 6-inch 4H-SiC epitaxial wafer

The invention relates to the technical field of numerical control machining, in particular to a method for improving the surface roughness of a 6-inch 4H-S < iC > epitaxial wafer, and the method comprises the steps of loading, pressure pumping, temperature rising, epitaxial growth including H2 etching, buffer layer growing, epitaxial layer growing, cooling and wafer taking, testing and the like. On one hand, the parameters can be accurately controlled and are convenient to adjust, and on the other hand, the parameter variation amplitude is small, and the influence on other characteristics is avoided. 本发明涉及数控加工技术领域，具体公开了一种改善6英寸4H-S iC外延片表面粗糙度的方法，包括：装载、抽压、升温、外延生长包括H2刻蚀，长缓冲层、长外延层、降温取片、测试等，本发明采用改变碳硅比的方式对外延片表面进行改善，来获得比较光滑的外延片表面，一方面参数能够精准控制，便于调整，另一方面，参数变化幅度较小，不会对其余表征产生影响。