Silicon carbide crystal growth crucible, preparation method thereof and crystal growth furnace

The invention provides a silicon carbide crystal growth crucible, a preparation method thereof and a crystal growth furnace. The silicon carbide crystal growth crucible comprises a crucible body, a carbon/carbon composite material ring and a crucible cover, wherein an opening is formed in the top of the crucible body; the carbon/carbon composite material ring is arranged on the inner side wall of the crucible body, and the carbon/carbon composite material ring is positioned at the upper part of the inner side wall of the crucible body; the crucible cover can cover the opening of the crucible body. Silicon carbide crystals prepared by adopting the silicon carbide crystal growth crucible are good in quality, and the growth efficiency of the silicon carbide crystals is high. 本发明提供了一种碳化硅晶体生长坩埚及其制备方法、晶体生长炉，碳化硅晶体生长坩埚包括坩埚体、碳/碳复合材料环和坩埚盖；其中，坩埚体的顶部具有开口；碳/碳复合材料环设置在坩埚体的内侧壁上，并且该碳/碳复合材料环位于坩埚体的内侧壁的上部；坩埚盖能够盖合该坩埚体的开口。采用本发明的碳化硅晶体生长坩埚所制备的碳化硅晶体的质量较好，且碳化硅晶体的生长效率较高。