Method for preparing two-dimensional transition metal chalcogenide from ink-jet printing water-based precursor
The invention discloses a method for preparing a two-dimensional transition metal chalcogenide from an ink-jet printing water-based precursor, and belongs to the technical field of two-dimensional semiconductor materials. According to the method, an industrial ink-jet printer is used, an in-situ wat...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a method for preparing a two-dimensional transition metal chalcogenide from an ink-jet printing water-based precursor, and belongs to the technical field of two-dimensional semiconductor materials. According to the method, an industrial ink-jet printer is used, an in-situ water precursor with stable use control is achieved at the pico-gram (10-12 g) level, ink-jet printing parameters are accurately adjusted, then the rapid heating process is conducted, the patterned TMDCs thin film with the large-area centimeter size and good thickness controllability can be easily achieved, and the method is suitable for large-scale production of the TMDCs thin film with the large-area centimeter size and the good thickness controllability. And millimeter-level high-quality single-layer TMDCs (the corresponding growth rate can reach 36.4 [mu] m s ) can be easily synthesized in a short time. According to the method, the high-precision and high-repeatability quantitative control on the precursor is |
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