METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM

The method comprises the following steps: (a) supplying a first raw material gas to a substrate provided with a concave structure on the surface, and forming a first film having a predetermined adhesive force on the inner surface of the concave structure; and (b) a step of supplying a second source...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SHIMIZU TOMISUKE, OZAKI TAKASHI, AKAE NAONORI
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The method comprises the following steps: (a) supplying a first raw material gas to a substrate provided with a concave structure on the surface, and forming a first film having a predetermined adhesive force on the inner surface of the concave structure; and (b) a step of supplying a second source gas to the substrate to form a second film on the first film, the second film having an adhesive force smaller than the adhesive force of the first film. 进行(a)向在表面设置有凹状结构的衬底供给第一原料气体而在所述凹状结构的内面形成具有规定的附着力的第一膜的工序；和(b)向所述衬底供给第二原料气体而在所述第一膜上形成具有比所述第一膜的附着力小的附着力的第二膜的工序。