Plasma enhanced atomic layer deposition of silicon-containing films

A method includes providing a substrate in a processing station including a substrate support and a showerhead, the substrate including a gap to be filled; and depositing a silicon-containing film in the gap by a plurality of cycles of plasma-enhanced atomic layer deposition (PEALD) treatment comprising operations (a)-(d): (a) a dosing operation comprising flowing a silicon-containing precursor through the showerhead into the treatment station such that the silicon-containing precursor can be adsorbed onto the substrate; (b) after (a), flowing a purge gas into the processing station; (c) after (b), exposing the substrate to a plasma species to react with the adsorbed silicon-containing precursor; and (d) after (c), flowing a purge gas into the processing station wherein the silicon-containing precursor continuously flows into the processing station for at least (b). 一种方法，其包含：在包含衬底支撑件和喷头的处理站中提供衬底，所述衬底包含待填充的间隙；以及通过包含操作(a)-(d)的多个循环的等离子体增强型原子层沉积(PEALD)处理，在所述间隙中沉积含硅膜：(a)配料操作，其包含使含硅前体经由所述喷头流入所述处理站，以使所述含硅前体能吸附至所述衬底上