Data storage structure, method of manufacturing same, and semiconductor device including same

A data storage structure may include a lower electrode, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer. The dielectric layer may include a metal compound having a crystalline phase and including a first metal. The dielectric layer may also include a phase control material in an interface region of the dielectric layer adjacent the upper electrode. The phase control material may include at least one of a second metal and a metal nitride. The second metal may be configured to induce a phase change in the metal compound of the dielectric layer. The metal nitride may include a second metal. 一种数据存储结构可以包括下电极、在下电极上的电介质层和在电介质层上的上电极。电介质层可以包括金属化合物，该金属化合物具有晶相并包括第一金属。电介质层还可以包括位于电介质层的与上电极相邻的界面区域中的相控制材料。相控制材料可以包括第二金属和金属氮化物中的至少一种。第二金属可以配置为引发电介质层的金属化合物中的相变。金属氮化物可以包括第二金属。