High-power pulse magnetron sputtering power supply adopting series auxiliary power supply and method thereof

The invention discloses a high-power pulse magnetron sputtering power supply adopting a series auxiliary power supply and a method thereof. The high-power pulse magnetron sputtering power supply comprises a high-power pulse power supply and an auxiliary power supply, the cathode of the high-power pu...

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Bibliographische Detailangaben
Hauptverfasser:	ZHAO WENJUN, DOU JIUCUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY GENERATION INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention discloses a high-power pulse magnetron sputtering power supply adopting a series auxiliary power supply and a method thereof. The high-power pulse magnetron sputtering power supply comprises a high-power pulse power supply and an auxiliary power supply, the cathode of the high-power pulse power supply is connected in series with the anode of the auxiliary power supply, and the anode of the serially connected high-power pulse power supply serves as a discharge load anode and is connected with the cathode of the auxiliary power supply through a load cathode. According to the method, the normal working state of the required Hi PI MS is maintained, the deposition speed is increased, target particles generated by arc discharge are effectively inhibited, pollution to a plated part is reduced, and therefore the performance of a film layer is improved; high-power magnetron sputtering discharge is stably maintained until the pulse is cut off; in addition, due to the existence of the high-power power supp