Method for improving surface defects of epitaxial wafer

The invention relates to a method for improving surface defects of an epitaxial wafer, which belongs to the technical field of silicon wafer processing and comprises the following operation steps of: 1, preparing a polished wafer with high pulling speed; and secondly, the steel plate is conveyed into an argon annealing furnace with the initial temperature ranging from 700 DEG C to 800 DEG C, the temperature of the argon annealing furnace is increased to 1200 DEG C, and heat preservation is conducted for 1-4 h. And thirdly, the annealed polished wafer descends to a cooling area, and the temperature of the cooling area ranges from 700 DEG C to 800 DEG C. And 4, rapidly cooling the silicon wafer by using a fan, then taking out the silicon wafer for particle determination, and observing whether the particles and defects on the surface of the silicon wafer are completely eliminated or not. And 5, the polished wafer subjected to argon annealing passes through the CMP mode or does not pass through the CMP mode, and